Mechanisms of alpha particle induced soft errors in nanoscale static random access memories
نویسندگان
چکیده
منابع مشابه
Static Random Access Memories
Testing static random access memories (SRAM’s) for all possible failures is not feasible. We have to restrict the class of faults to he considered. This restricted class is called a fault model. A fault model for SRAM’s is presented based on physical spot defects, which are modeled as local disturbances in the layout of an SRAM. Two linear test algorithms are proposed, that cover 100% of the fa...
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Memories are most important building blocks in many digital systems. As the Integrated Circuits requirements are growing, the test circuitry must grow as well. There is a need for more efficient test techniques with low power and high speed. Many Memory Built in Self-Test techniques have been proposed to test memories. Compared with combinational and sequential circuits memory testing utilizes ...
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The ever increasing trend to reduce DPM levels of memories requires tests with very high fault coverages. The very important class of dynamic fault, therefore cannot be ignored any more. It will be shown in this paper that conventional memory tests constructed to detect the static faulty behavior of a specific defect do not necessarily detect its dynamic faulty behavior; which has been shown to...
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Static random-access memories (SRAMs) exhibit faults that are electrical in nature. Functional and electrical testing are performed to diagnose faulty operation. These tests are usually designed from simple fault models that describe the chip interface behavior without a thorough analysis of the chip layout and technology. However, there are certain technology and layout-related defects that ar...
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Semiconductor manufacturing process scaling increases leakage and transistor variations, both of which are problematic for static random access memory (SRAM). Since SRAM is a critical component in modern CMOS integrated circuits, novel approaches to addressing these problems are needed. Here, six and seven transistor SRAM cells are presented that do not suffer from reduced stability when read. ...
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ژورنال
عنوان ژورنال: Acta Physica Sinica
سال: 2020
ISSN: 1000-3290
DOI: 10.7498/aps.69.20201796